Browsing by Author "Balestra, F."

Now showing 1 - 4 of 4

Influence of gamma-radiation on short channel SOI-MOSFETs with thin SiO2 films

Claeys, Cor
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Simoen, Eddy
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Litovchenko, V.G.
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Evtukh, A.
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Efremov, A.
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Kizjak, A.
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Rassamakin, J.
Proceedings paper
2002, Progress in SOI Structures and Devices Operating at Extreme Conditions. Proceedings of the NATO Advanced Research Workshop, 15/10/2000, p.211-220
Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures

Marchand, B.
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Cretu, B.
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Ghibaudo, G.
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Balestra, F.
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Blachier, D.
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Leroux, C.
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Deleonibus, S.
Journal article
2002, Solid-State Electronics, (46) 3, p.337-342
Shrinking from 0.25 μm down to 0.12 μm SOI CMOS technology node: a contribution to 1/f noise in partially depleted n-MOSFETs

Dieudonné, F.
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Haendler, S.
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Jomaah, J.
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Raynaud, C.
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De Meyer, Kristin
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van Meer, Hans
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Balestra, F.
Proceedings paper
2002, Proceedings Ultimate Integration of Silicon (ULIS) Workshop, 7/03/2002, p.33-36
Time-dependent degradation law for reliable lifetime prediction in sub-0.25μm bulk silicon N-MOSFETs

Szelag, B.
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Kubicek, Stefan
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De Meyer, Kristin
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Balestra, F.
Journal article
1999, Electronics Letters, (35) 16, p.1385-1386