Browsing by Author "Barbot, J.F."
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Publication Co-germanide Schottky contacts on Ge
Proceedings paper2008, Gettering and Defect Engineering in Semiconductor Technology XII, 14/10/2007, p.107-111Publication Comparison of defects created by plasma-based ion implantation and conventional implantation of hydrogen in germanium
Proceedings paper2008, Gettering and Defect Engineering in Semiconductor Technology XII, 14/10/2007, p.101-106Publication Defects created by plasma immersion ion implantation of hydrogen in germanium
Oral presentation2007, MRS Spring Meeting Symposium F: Semiconductor Defect Engineering - Materials, Synthesis, Structures and Devices IIPublication Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
Journal article2005, Journal of Physics: Condensed Matter, (17) 22, p.S2255-S2266Publication Electrically active defects in irradiated n-Type Czochralski silicon doped with group IV impurities
Oral presentation2004, Workshop on Defects Relevant to Engineering Advanced Silicon-Based DevicesPublication Extended defects created by helium implantation at different temperature in germanium
Oral presentation2008, International Conference on Extended Defects in Semiconductors - EDSPublication Extended defects created by hydrogen implantation in germanium: the influence of the substrate temperature
Oral presentation2008, International Conference on Extended Defects in Semiconductors - EDSPublication Extended defects created by light ion implantation in Germanium
Publication Influence of pre-treatment on Co-germanide Schottky contacts
Journal article2008, Materials Science in Semiconductor Processing, (11) 5_6, p.300-304Publication On the effect of lead on irradiation induced defects in silicon
Proceedings paper2005, Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting, 25/09/2005, p.373-378Publication Radiation-induced deep levels in lead and tin doped n-type czochralski silicon
Proceedings paper2004, High Purity Silicon VIII, 3/10/2004, p.395-406Publication The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium
Journal article2007, Journal of Applied Physics, (102) 9, p.96101