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Browsing by Author "Bhouri, Nada"

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    Asymmetric relaxation of SiGe in patterned Si line structures

    Wormington, Matthew
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    Lafford, Tamzin
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    Godny, Stephane
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    Ryan, Paul
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    Loo, Roger  
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    Bhouri, Nada
    Proceedings paper
    2007, International Conference on Frontiers of Characterization and Metrology for Nanoelectronics at NIST, 27/03/2007
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    Influence of the highly-doped drain implantation and the window size on defect creation in p/n Si1-xGex source/drain junctions

    Chowdhury, Mohammad Kamruzzaman
    ;
    Vissouvanadin Soubaretty, Bertrand
    Proceedings paper
    2008, Gettering and Defect Engineering in Semiconductor Technology XII, 14/10/2007, p.95-100
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    pMOS transistor with embedded SiGe: elastic and plastic relaxation issues

    Hikavyy, Andriy  
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    Bhouri, Nada
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    Loo, Roger  
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    Verheyen, Peter  
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    Clemente, Francesca
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    Hopkins, John
    Meeting abstract
    2007, 5th International Conference on Silicon Epitaxy and Heterostructures - ICSI-5, 20/05/2007, p.145-146
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    pMOS transistor with embedded SiGe: elastic and plastic relaxation issues

    Hikavyy, Andriy  
    ;
    Bhouri, Nada
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    Loo, Roger  
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    Verheyen, Peter  
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    Clemente, Francesca
    ;
    Hopkins, John
    Journal article
    2008, Thin Solid Films, (517) 1, p.113-116
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    Relaxation induced excess leakage current in recessed Si1-xGex source/drain junctions

    Bargallo Gonzalez, Mireia
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    Chowdhury, Mohammad Kamruzzaman
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    Bhouri, Nada
    ;
    Verheyen, Peter  
    Proceedings paper
    2007, Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS 3: New Materials, Processes and Equipment, 6/05/2007, p.389-396

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