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Browsing by Author "Bi, J."

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    Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes

    Gao, R.
    ;
    Ji, Zhigang
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    Hatta, S.M.
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    Zhang, J.F.
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    Franco, Jacopo  
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    Kaczer, Ben  
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    Zhang, W.
    ;
    Duan, M.
    Proceedings paper
    2016, IEEE International Electron Devices Meeting - IEDM, 5/12/2016, p.778-781
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    Single- and multiple-event induced upsets in HfO2/Hf 1T1R RRAM

    Bennett, W.
    ;
    Hooten, N.
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    Schrimpf, R.
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    Reed, R.
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    Mendenhall, M.H.
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    Alles, M.
    ;
    Bi, J.
    ;
    Zhang, E.
    Journal article
    2014, IEEE Transactions on Nuclear Science, (61) 4, p.1717-1725

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