imec Institutional Repository Browsing {{ collection }} by Author "Bougrioua, Zahia"

Publication

2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE

Bougrioua, Zahia

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Farvacque, J. L.

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Moerman, Ingrid

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Carosella, F.

Journal article

2001, Physica Status Solidi B, (228) 2, p.625-628

Publication

AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments

Mistele, D.

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Rotter, T.

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Röver, K. S.

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Paprotta, S.

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Bougrioua, Zahia

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Fedler, F.

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Klausing, H.

Oral presentation

2001, MRS Fall Meeting 2001: Symposium I: GaN and related alloys; November 26-30, 2001; Boston, MA, USA.

Publication

Chemical mapping of InGaN MQWs

Sharma, N.

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Tricker, D.

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Thomas, P.

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Bougrioua, Zahia

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Jacobs, Koen

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Cheyns, Jan

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Moerman, Ingrid

Journal article

2001, Journal of Crystal Growth, (230) 3_4, p.438-441

Publication

Chemical mapping of V-defects in InGaN MQWs

Sharma, N.

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Tricker, D. M.

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Thomas, P. J.

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Humphreys, C. J.

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Bougrioua, Zahia

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Jacobs, Koen

Oral presentation

2000, 4th European GaN Workshop - EGW-4

Publication

Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy

Hamilton, B.

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Ferhah, K.

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Davidson, J.

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Dawson, P.

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Whittaker, E.

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Cheng, T. S.

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Foxon, C. T.

Meeting abstract

1999, 3rd International Conference on Nitride Semiconductors - ICS3, 04/07/1999, p.131

Publication

Development of GaN-materials for optoelectronic applications

Cheyns, Jan

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Jacobs, Koen

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Bougrioua, Zahia

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Moerman, Ingrid

Oral presentation

2000, 1st Doctoraatssymposium FTW

Publication

Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes

Monroy, E.

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Calle, F.

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Pau, J. L.

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Muñoz, E.

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Verdú, M.

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Sánchez, F. J.

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Montojo, M. T.

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Omnès, F.

Journal article

2001, Physica Status Solidi A, (188) 1, p.307-310

Publication

Electrical characteristics of n-type GaN grown by LP-MOVPE

Bougrioua, Zahia

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Farvacque, J. L.

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Moerman, Ingrid

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Thrush, E. J.

Oral presentation

1999, 1st Arab Congress on Materials Science - ACMS-1

Publication

Fabrication and characterization of AlGaN/GaN HEMTs

Calle, F.

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Monroy, E.

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Tirado, J. M.

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Ranchal, R.

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Jiménez, A.

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Palacios, T.

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Muñoz, E.

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Grajal, J.

Oral presentation

2001, 11th European Heterostructure Technology Workshop

Publication

Free-carrier mobility in GaN in the pPresence of dislocation walls

Farvacque, J. L.

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Bougrioua, Zahia

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Moerman, Ingrid

Journal article

2001, Physical Review B, (63) 11, p.5202-5209

Publication

GaN based device structures grown in a close coupled showerhead MOCVD reactor

Thrush, E. J.

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Kappers, M. J.

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Bougrioua, Zahia

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Davies, R. A.

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Wallis, R. H.

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Phillips, W. A.

Oral presentation

2001, National Chinese MOCVD Conferenc; October 2001;

Publication

Heterostructure field effect transistor types with novel gate dielectrics

Mistele, D.

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Rotter, T.

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Bougrioua, Zahia

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Röver, K. S.

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Fedler, F.

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Klausing, H.

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Stemmer, J.

Journal article

2001, Physica Status Solidi A, (188) 1, p.255-258

Publication

Influence of growth temperature on electrical characteristics of silicon doped GaAn grown by LP-MOVPE

Bougrioua, Zahia

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Moerman, Ingrid

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Demeester, Piet

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Thrush, E. J.

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Guyaux, J. L.

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Garcia, J. C.

Proceedings paper

1999, Proceedings of the 8th European Workshop on MOVPE, 08/06/1999, p.61-63

Publication

Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD

Harris, J. J.

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Lee, K. J.

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Harrison, I.

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Flannery, L. B.

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Korakakis, D.

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Cheng, T.

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Foxon, C. T.

Meeting abstract

1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.126

Publication

Interpretation of the temperature-dependent transport properties of GaN/Sapphire films grown by MBE and MOCVD

Harris, J. J.

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Lee, K. J.

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Harrison, I.

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Flannery, L. B.

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Korakakis, D.

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Cheng, T. S.

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Foxon, C. T.

Journal article

1999, Physica Status Solidi A, (176) 1, p.363-367

Publication

Investigation into the transport properties of MBE grown GaN

Ansell, B. J.

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Harrison, I.

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Foxon, C. T.

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Cheng, T. S.

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Harris, J. J.

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Mavroidis, C.

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Bougrioua, Zahia

Oral presentation

2000, 4th European GaN Workshop - EGW-4

Publication

Laser reflectance monitoring of GaN MOCVD growth

Stafford, A.

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Irvine, S. J. C.

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Bougrioua, Zahia

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Jacobs, Koen

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Moerman, Ingrid

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Thrush, E.

Oral presentation

1999, 1st UK Nitrides Consortium Conference; 24 September 1999; Glasgow, Scotland.

Publication

Material optimisation for AlGaN/GaN HFET applications

Bougrioua, Zahia

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Moerman, Ingrid

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Sharma, N.

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Wallis, R. H.

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Cheyns, Jan

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Jacobs, Koen

Journal article

2001, Journal of Crystal Growth, (230) 3_4, p.573-578

Publication

Microscale luminescence of ELOG specimens on (0001) sapphire

Amokrane, A.

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Dassonneville, S.

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Sieber, B.

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Jacobs, Koen

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Bougrioua, Zahia

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Moerman, Ingrid

Proceedings paper

1999, Microscopy of Semiconducting Materials, 22/03/1999, p.345-348

Publication

Microstructural aspects of the early stages of GaN growth by MOCVD

Ramloll, C. S.

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Barnard, J. S.

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Bougrioua, Zahia

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Humphreys, C. J.

Oral presentation

2001, Electron Microscopy and Analysis Group conference - EMAG; 5-7 September 2001; Dundee, United Kingdom.

Browsing by Author "Bougrioua, Zahia"