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Browsing by Author "Brugere, Antoine"

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    Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions

    Eneman, Geert  
    ;
    Wiot, Maxime
    ;
    Brugere, Antoine
    ;
    Sicart i Casain, Oriol
    ;
    Sonde, Sushant
    Journal article
    2008, IEEE Transactions on Electron Devices, (55) 9, p.2287-2296
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    Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium

    Simoen, Eddy  
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    Brugere, Antoine
    ;
    Satta, Alessandra
    ;
    Firrincieli, Andrea  
    ;
    Van Daele, Benny
    Journal article
    2009, Journal of Applied Physics, (105) 9, p.93538
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    Solid-phase epitaxial regrowth of phosphorus implanted amorphized germanium

    Simoen, Eddy  
    ;
    Brugere, Antoine
    ;
    Satta, Alessandra
    ;
    Van Daele, Benny
    ;
    Brijs, Bert
    Meeting abstract
    2008, 214th ECS Meeting, 12/10/2008, p.2490
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    Solid-phase epitaxial regrowth of phosphorus implanted amorphized germanium

    Simoen, Eddy  
    ;
    Brugere, Antoine
    ;
    Satta, Alessandra
    ;
    Van Daele, Benny
    ;
    Brijs, Bert
    Proceedings paper
    2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 13/10/2008, p.1031-1038

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