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Browsing by Author "Burton, D."

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    Dependence of energy distributions of interface states on stress conditions

    Zhang, Wenqi
    ;
    Zhang, Jenny
    ;
    Uren, M. J.
    ;
    Groeseneken, Guido  
    ;
    Degraeve, Robin  
    ;
    Lalor, M.
    ;
    Burton, D.
    Journal article
    2001, Microelectronic Engineering, (59) 1_4, p.95-100
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    Electron trap generation at different temperatures in the gate oxide

    Zhang, W.D.
    ;
    Zhang, J.F.
    ;
    Wood, M.
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    Lalor, M.
    ;
    Burton, D.
    ;
    Groeseneken, Guido  
    ;
    Degraeve, Robin  
    Oral presentation
    2002, 33rd IEEE Semiconductor Interface Specialists Conference - SISC
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    On the interface states generated under different stress conditions

    Zhang, Wenqi
    ;
    Zhang, Jenny
    ;
    Uren, M. J.
    ;
    Groeseneken, Guido  
    ;
    Degraeve, Robin  
    ;
    Lalor, M.
    ;
    Burton, D.
    Journal article
    2001, Applied Physics Letters, (79) 19, p.3092-3094
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    On the mechanism of electron trap generation in gate oxides

    Zhang, Wenqi
    ;
    Zhang, Jenny
    ;
    Lalor, M.
    ;
    Burton, D.
    ;
    Groeseneken, Guido  
    ;
    Degraeve, Robin  
    Journal article
    2001, Microelectronic Engineering, (59) 1_4, p.89-94
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    Properties of electron traps generated in the gate oxide

    Zhang, Wenqi
    ;
    Zhang, Jenny
    ;
    Lalor, M.
    ;
    Burton, D.
    ;
    Groeseneken, Guido  
    ;
    Degraeve, Robin  
    Oral presentation
    2001, SISC-Conference; December 2001; Washington, D.C.
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    Two types of electron traps generated in the gate silicon dioxide

    Zhang, W.D.
    ;
    Zhang, J.F.
    ;
    Lalor, M.
    ;
    Burton, D.
    ;
    Groeseneken, Guido  
    ;
    Degraeve, Robin  
    Journal article
    2002, IEEE Trans. Electron Devices, (49) 11, p.1868-1875

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