Browsing by Author "Burton, D."
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Publication Dependence of energy distributions of interface states on stress conditions
;Zhang, Wenqi ;Zhang, Jenny ;Uren, M. J.; ; ;Lalor, M.Burton, D.Journal article2001, Microelectronic Engineering, (59) 1_4, p.95-100Publication Electron trap generation at different temperatures in the gate oxide
Oral presentation2002, 33rd IEEE Semiconductor Interface Specialists Conference - SISCPublication On the interface states generated under different stress conditions
;Zhang, Wenqi ;Zhang, Jenny ;Uren, M. J.; ; ;Lalor, M.Burton, D.Journal article2001, Applied Physics Letters, (79) 19, p.3092-3094Publication On the mechanism of electron trap generation in gate oxides
Journal article2001, Microelectronic Engineering, (59) 1_4, p.89-94Publication Properties of electron traps generated in the gate oxide
Oral presentation2001, SISC-Conference; December 2001; Washington, D.C.Publication Two types of electron traps generated in the gate silicon dioxide
Journal article2002, IEEE Trans. Electron Devices, (49) 11, p.1868-1875