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Browsing by Author "Calderon Ardila, Sergio"

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    First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack

    Sioncke, Sonja
    ;
    Franco, Jacopo  
    ;
    Vais, Abhitosh  
    ;
    Putcha, Vamsi  
    ;
    Nyns, Laura  
    Proceedings paper
    2017, Symposium on VLSI Technology, 5/06/2017, p.38-39

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