Browsing by Author "Calderon Ardila, Sergio"
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Publication First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack
Proceedings paper2017, Symposium on VLSI Technology, 5/06/2017, p.38-39