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First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack
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1917 since deposited on 2021-10-24
Acq. date: 2025-10-23
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1917 since deposited on 2021-10-24
Acq. date: 2025-10-23
Citations