Publication:

First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack

Date

2017
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorSioncke, Sonja
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVais, Abhitosh
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorNyns, Laura
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorRooyackers, Rita
dc.contributor.authorCalderon Ardila, Sergio
dc.contributor.authorSpampinato, Valentina
dc.contributor.authorFranquet, Alexis
dc.contributor.authorMaes, Willem
dc.contributor.authorXie, Qi
dc.contributor.authorGivens, Michael
dc.contributor.authorTang, Fu
dc.contributor.authorJiang, X.
dc.contributor.authorHeyns, Marc
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorThean, Aaron
dc.contributor.authorMocuta, Dan
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorSpampinato, Valentina
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorGivens, Michael
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecSpampinato, Valentina::0000-0003-3225-6740
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T13:41:24Z
dc.date.available2021-10-24T13:41:24Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29450
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7998192/
dc.source.beginpage38
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate5/06/2017
dc.source.conferencelocationKyoto Japan
dc.source.endpage39
dc.title

First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
35552.pdf
Size:
428.51 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions