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Browsing by Author "Callens, Freddy"

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    Deep level transient spectroscopy (DLTS) study of P3HT:PCBM organic solar cells

    Lauwaert, Johan
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    Khelifi, Samira
    ;
    Decock, Koen
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    Burgelman, Marc
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    Voroshazi, Eszter  
    Oral presentation
    2011, MRS Fall Meeting Symposium H: Organic Photovotlaics Devices and Processing
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    Deep-level transient spectroscopic study of quenched-in defects in germanium

    Segers, Siegfried
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    Lauwaert, Johan
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    Clauws, Paul
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    Callens, Freddy
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    Vanhellemont, Jan
    Oral presentation
    2014, EMRS Spring Meeting Symposium X: Materials Research for Group IV Semiconductors
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    Direct estimation of captive cross sections in the presence of low capture: application of the identifcation of quenched-in deep-level defects in Ge

    Segers, Siegfried
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    Lauwaert, Johan
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    Clauws, Paul
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    Simoen, Eddy  
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    Vanhellemont, Jan
    Journal article
    2014, Semiconductor Science and Technology, (29) 12, p.125007
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    Electronic properties of manganese in germanium

    Lauwaert, Johan
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    Segers, Siegfried
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    Moens, Filip
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    Opsomer, Karl  
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    Clauws, Paul
    ;
    Callens, Freddy
    Journal article
    2015, Journal of Physics D: Applied Physics, (48) 17, p.175101
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    Mn related defect levels in germanium

    Lauwaert, Johan
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    Moens, Filip
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    Segers, Siegfried
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    Opsomer, Karl  
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    Simoen, Eddy  
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    Vanhellemont, Jan
    Proceedings paper
    2014, 226th ECS Fall Meeting - High Purity and High Mobility Semiconductors Symposium, 5/10/2014, p.1658
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    Temperature-independent slow carrier emission from deep-level defects in p-type germanium

    Segers, Siegfried
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    Lauwaert, Johan
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    Clauws, Paul
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    Simoen, Eddy  
    ;
    Vanhellemont, Jan
    Journal article
    2013, Journal of Physics D: Applied Physics, (46) 42, p.425101
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    Tunnel emission for Co and Cr related levels in p-type Ge

    Segers, Siegfried
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    Lauwaert, Johan
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    Clauws, Paul
    ;
    Simoen, Eddy  
    ;
    Vanhellemont, Jan
    Meeting abstract
    2013, International Conference on Defects in Semiconductors, 15/07/2013, p.1

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