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Direct estimation of captive cross sections in the presence of low capture: application of the identifcation of quenched-in deep-level defects in Ge
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Direct estimation of captive cross sections in the presence of low capture: application of the identifcation of quenched-in deep-level defects in Ge
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Date
2014
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Segers, Siegfried
;
Lauwaert, Johan
;
Clauws, Paul
;
Simoen, Eddy
;
Vanhellemont, Jan
;
Callens, Freddy
;
Vrielinck, Henk
Journal
Semiconductor Science and Technology
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1950
since deposited on 2021-10-22
Acq. date: 2026-01-05
Citations
Metrics
Views
1950
since deposited on 2021-10-22
Acq. date: 2026-01-05
Citations