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Browsing by Author "Carmo, G. J."

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    Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C

    Agopian, P. G. D.
    ;
    Carmo, G. J.
    ;
    Martino, J. A.
    ;
    Simoen, Eddy  
    ;
    Peralagu, Uthayasankaran  
    Journal article
    2021, SOLID-STATE ELECTRONICS, 185, p.108091

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