Publication:
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C
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1884 since deposited on 2022-02-25
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Acq. date: 2026-01-09
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1884 since deposited on 2022-02-25
1last month
1last week
Acq. date: 2026-01-09
Citations