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Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C
Publication:
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C
Date
2021
Journal article
https://doi.org/10.1016/j.sse.2021.108091
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Agopian, P. G. D.
;
Carmo, G. J.
;
Martino, J. A.
;
Simoen, Eddy
;
Peralagu, Uthayasankaran
;
Parvais, Bertrand
;
Waldron, Niamh
;
Collaert, Nadine
Journal
SOLID-STATE ELECTRONICS
Abstract
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1883
since deposited on 2022-02-25
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item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
1883
since deposited on 2022-02-25
446
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations