Publication:

Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C

Date

2021
Journal article
https://doi.org/10.1016/j.sse.2021.108091
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dc.contributor.authorAgopian, P. G. D.
dc.contributor.authorCarmo, G. J.
dc.contributor.authorMartino, J. A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorParvais, Bertrand
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2022-02-25T13:34:39Z
dc.date.available2022-02-25T13:34:39Z
dc.date.issued2021
dc.identifier.doi10.1016/j.sse.2021.108091
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39157
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage108091
dc.source.issuena
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages6
dc.source.volume185
dc.title

Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C

dc.typeJournal article
dspace.entity.typePublication
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