Browsing by Author "Chandra, V."

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Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM

Duan, M.
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Zhang, J. F.
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Manut, A.
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Ji, Z.
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Zhang, W.
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Asenov, A.
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Gerrer, L.
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Reid, D.
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Razaidi, H.
Proceedings paper
2015, IEEE International Electron Devices Meeting - IEDM, 7/12/2015, p.547-550
Interaction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction

Meng, D.
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Zhang, J. F.
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Zhang, J. C.
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Zhang, W.
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Ji, Z.
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Benbakhti, B.
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Zheng, X. F.
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Hao, Y.
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Vigar, D.
Proceedings paper
2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.XT-5.1-XT-5.7