Browsing by Author "Ching, L. Y."
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Publication Influence of device geometry on ESD performance for deep submicron CMOS technology
Proceedings paper1999, Tagungsband 6th ESD-Forum; October 1999; München, Germany., p.83-93Publication Influence of gate length on ESD performance for deep submicron CMOS technology
Proceedings paper1999, Electrical Overstress/Electrostatic Discharge Symposium Proceedings - EOS-ESD, 28/09/1999, p.95-104Publication Influence of gate length on ESD-performance for deep submicron CMOS technology
Journal article2001, Microelectronics Reliability, (41) 3, p.375-383