Browsing by Author "Clauws, Paul"
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Publication Deep-level transient spectroscopic study of quenched-in defects in germanium
;Segers, Siegfried ;Lauwaert, Johan ;Clauws, Paul ;Callens, FreddyVanhellemont, JanOral presentation2014, EMRS Spring Meeting Symposium X: Materials Research for Group IV SemiconductorsPublication Direct estimation of captive cross sections in the presence of low capture: application of the identifcation of quenched-in deep-level defects in Ge
Journal article2014, Semiconductor Science and Technology, (29) 12, p.125007Publication Electronic properties of manganese in germanium
Journal article2015, Journal of Physics D: Applied Physics, (48) 17, p.175101Publication Mn related defect levels in germanium
Proceedings paper2014, 226th ECS Fall Meeting - High Purity and High Mobility Semiconductors Symposium, 5/10/2014, p.1658Publication Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium
Journal article2008, Journal of Applied Physics, (104) 2, p.23705Publication Temperature-independent slow carrier emission from deep-level defects in p-type germanium
Journal article2013, Journal of Physics D: Applied Physics, (46) 42, p.425101Publication Tunnel emission for Co and Cr related levels in p-type Ge
Meeting abstract2013, International Conference on Defects in Semiconductors, 15/07/2013, p.1Publication What do we know about hydrogen-induced thermal donors?
Proceedings paper2008, High Purity Silicon 10, 13/10/2008, p.129-150