Browsing by Author "Collart, E.H.J."
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Publication Damage accumulation and dopant migration during shallow As and Sb implantation into Si
Journal article2004, Nuclear Instruments & Methods in Physics Research B, 216, p.67-74Publication High depth resolution characterization of the damage and annealing behaviour of ultrashallow As-implants in Si
Proceedings paper2002, Proceedings 14th International Conference on Ion Implantation Technology Conference, 22/09/2002, p.597-600Publication Sub nanometer depth resolution profiling of the evolution and annealing of damage and the dopant redistribution of ultra-shallow As and Sb implants in Si
Meeting abstract2003, Ultra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic., 27/04/2003, p.446