Browsing by Author "Duxbury, N."

Now showing 1 - 5 of 5

Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD

Duxbury, N.
;
Dawson, P.
;
Bangert, U.
;
Thrush, E. J.
;
Van der Stricht, Wim
;
Jacobs, Koen
Journal article
1999, Physica Status Solidi B, (216) 1, p.355-359
Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD

Duxbury, N.
;
Dawson, P.
;
Bangert, U.
;
Thrush, E. J.
;
Van der Stricht, Wim
;
Jacobs, Koen
Meeting abstract
1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.130
Electron energy loss studies at dislocations in GaN

Shang, P.
;
Bangert, U.
;
Harvey, A. J.
;
Duxbury, N.
;
Jacobs, Koen
Proceedings paper
1999, Electron Microscopy and Analysis 1999; Sheffield, UK. August 1999., p.323-326
Indium segregation in InGaN quantum-well structures

Duxbury, N.
;
Bangert, U.
;
Dawson, P.
;
Thrush, E. J.
;
Van der Stricht, Wim
;
Jacobs, Koen
Journal article
2000, Applied Physics Letters, (76) 12, p.1600-1602
Microstructure and compositional bahviour of InGaN/GaN multiple quantum well structures

Duxbury, N.
;
Bangert, U.
;
Shang, P.
;
Thrush, E. J.
;
Jacobs, Koen
Proceedings paper
1999, Electron Microscopy and Analysis 1999; Sheffield, UK. August 1999., p.207-210