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Conference contributions
Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD
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Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD
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Date
1999
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3406.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Duxbury, N.
;
Dawson, P.
;
Bangert, U.
;
Thrush, E. J.
;
Van der Stricht, Wim
;
Jacobs, Koen
;
Moerman, Ingrid
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1914
since deposited on 2021-10-06
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Acq. date: 2026-01-08
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Metrics
Views
1914
since deposited on 2021-10-06
1
last month
Acq. date: 2026-01-08
Citations