Browsing by Author "Fleetwood,"

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TID and displacement damage resilience of 1T1R Hfo2 hf resistive memories

Weeden-Wright, S.L.
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Bennett, W.G.
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Hooten, N.C.
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Zhang, E.X.
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McCurdy, M.W.
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Schrimpf, R.D.
Journal article
2014, IEEE Transactions on Nuclear Science, (61) 6, p.2972-2978
Total-ionizing-dose effects and low-frequency noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 dielectrics

Bonaldo,
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Zhao,
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O Hara,
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Gorchichko,
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Zhang,
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Gerardin,
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Paccagnella,
;
Waldron, Niamh
Journal article
2020, IEEE Transactions on Nuclear Science, (67) 1, p.210-220