Browsing by Author "Foxon, C. T."

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Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy

Hamilton, B.
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Ferhah, K.
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Davidson, J.
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Dawson, P.
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Whittaker, E.
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Cheng, T. S.
;
Foxon, C. T.
Meeting abstract
1999, 3rd International Conference on Nitride Semiconductors - ICS3, 04/07/1999, p.131
Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD

Harris, J. J.
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Lee, K. J.
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Harrison, I.
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Flannery, L. B.
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Korakakis, D.
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Cheng, T.
;
Foxon, C. T.
Meeting abstract
1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.126
Interpretation of the temperature-dependent transport properties of GaN/Sapphire films grown by MBE and MOCVD

Harris, J. J.
;
Lee, K. J.
;
Harrison, I.
;
Flannery, L. B.
;
Korakakis, D.
;
Cheng, T. S.
;
Foxon, C. T.
Journal article
1999, Physica Status Solidi A, (176) 1, p.363-367
Investigation into the transport properties of MBE grown GaN

Ansell, B. J.
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Harrison, I.
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Foxon, C. T.
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Cheng, T. S.
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Harris, J. J.
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Mavroidis, C.
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Bougrioua, Zahia
Oral presentation
2000, 4th European GaN Workshop - EGW-4
Superconductors coupled with a two-dimensional electron gas in GaAs/AlGaAs and InAs/AlGaSb heterostructures

Gao, J. R.
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Heida, J. P.
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van Wees, B. J.
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Klapwijk, T. M.
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Borghs, Gustaaf
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Foxon, C. T.
Journal article
1994, Surface Science, (305) 1_3, p.470-5