Browsing by Author "Gaillard, F."

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A new method for quickly evaluating reversible and permanent components of the BTI degradation

Garros, X.
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Subirats, Alexandre
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Reimbold, G.
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Gaillard, F.
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Diouf, C.
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Federspiel, X.
;
Huard, V.
Proceedings paper
2018, 2018 IEEE International Reliability Physics Symposium - IRPS, 11/03/2018, p.P-RT.6
Characterization and integration of a new Si-O-C film deposited by CVD

Alves Donaton, Ricardo
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Struyf, Herbert
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Lepage, Muriel
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Coenegrachts, Bart
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Stucchi, Michele
Proceedings paper
2001, Advanced Metallization Conference 2000, 3/10/2000, p.595-601
Impact of material/process interactions on the properties of a porous CVD-O3 low-k dielectric film

Travaly, Youssef
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Eyckens, Brenda
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Carbonell, Laure
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Rothschild, Aude
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Le, Quoc Toan
Journal article
2002, Microelectronic Engineering, (64) 1_4, p.367-374