Browsing by Author "Garello, Kevin"
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Publication 2D material integration in the semiconductor industry: Challenges and Solutions
Meeting abstract2019, Graphene week 2019, 23/09/2019Publication All-Electrical Control of Scaled Spin Logic Devices Based on Domain Wall Motion
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 4, p.2116-2122Publication BEOL compatible high retention perpendicular SOT-RAM device for SRAM replacement and AiMC
Proceedings paper2021, 2021 Symposium on VLSI Technology, 13/06/2021Publication BEOL compatible top pinned magnetic tunnel junctions with a synthetic ferromagnetic pinning layer design
Meeting abstract2018, Joint European Magnetic Symposia. 9th JEMS Conference, 3/09/2018, p.SP4.2.06Publication Deterministic and field-free voltage-controlled MRAM for high performance and low power applications
Proceedings paper2020, IEEE Symposium on VLSI Technology and Circuits, JUN 15-19, 2020Publication Distinctive behavior of perpendicular magnetic tunnel junctions with size comparable to the electrical switching nucleation
Oral presentation2017, Intermag 2017Publication Double torque perpendicular STT-MRAM devices for low power IoT and edge computing
Oral presentation2021, Intermag 2021Publication Efficient spin orbit torque switching in fully integrated synthetic antiferromagnetic free layers
Oral presentation2019, Spice Workshop - from topology to neuromorphic computingPublication Electrical Detection and Nucleation of a Magnetic Skyrmion in a Magnetic Tunnel Junction Observed via Operando Magnetic Microscopy
Journal article2024, NANO LETTERS, (24) 12, p.3557-3565Publication Enabling BEOL compatibility in top-pinned STT-MRAM
Meeting abstract2019, York-Tohoku-Kaiserslautern Research Symposium on "New-Concept Spintronics Devices", 12/06/2019, p.37Publication Evidence of magnetostrictive effects on STT-MRAM performances by atomistic and spin modeling
Proceedings paper2018, IEEE Electron Devices Meeting - IEDM, 1/12/2018, p.942-945Publication Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
Journal article2023, NANO LETTERS, (23) 12, p.5482-5489Publication Field-free spin-orbit torque switching in magnetic tunnel junctions at sub-ns timescales
Meeting abstract2020, Intermag 2020, 4/05/2020, p.CB-01Publication Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales
Journal article2020, Applied Physics Letters, (116) 23, p.232406Publication High-density SOT-MRAM technology and design specifications for the embedded domain at 5nm node
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication High-Performance Radiation-Hardened Spintronic Retention Latch and Flip-Flop for Highly Reliable Processors
Journal article2021, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (21) 2, p.258-266Publication Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions
Journal article2018, Applied Physics Letters, (113) 14, p.142405Publication Impact of temperature on the switching behavior of scaled perpendicular magnetic tunnel junctions
Meeting abstract2017, 62nd Annual Conference on Magnetism and Magnetic Materials - MMM, 6/11/2017, p.BE-11Publication Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions
Journal article2021, PHYSICAL REVIEW APPLIED, (15) 5Publication Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
Proceedings paper2019, 2019 Symposia on VLSI Technology and Circuits, 9/06/2019, p.T194-T195
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