Browsing by Author "Garello, Kevin"
- Results Per Page
- Sort Options
Publication 2D material integration in the semiconductor industry: Challenges and Solutions
Meeting abstract2019, Graphene week 2019, 23/09/2019Publication All-Electrical Control of Scaled Spin Logic Devices Based on Domain Wall Motion
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 4, p.2116-2122Publication BEOL compatible high retention perpendicular SOT-RAM device for SRAM replacement and AiMC
Proceedings paper2021, 2021 Symposium on VLSI Technology, 13/06/2021Publication BEOL compatible top pinned magnetic tunnel junctions with a synthetic ferromagnetic pinning layer design
Meeting abstract2018, Joint European Magnetic Symposia. 9th JEMS Conference, 3/09/2018, p.SP4.2.06Publication Deterministic and field-free voltage-controlled MRAM for high performance and low power applications
Proceedings paper2020, IEEE Symposium on VLSI Technology and Circuits, JUN 15-19, 2020Publication Distinctive behavior of perpendicular magnetic tunnel junctions with size comparable to the electrical switching nucleation
Oral presentation2017, Intermag 2017Publication Double torque perpendicular STT-MRAM devices for low power IoT and edge computing
Oral presentation2021, Intermag 2021Publication Efficient spin orbit torque switching in fully integrated synthetic antiferromagnetic free layers
Oral presentation2019, Spice Workshop - from topology to neuromorphic computingPublication Electrical Detection and Nucleation of a Magnetic Skyrmion in a Magnetic Tunnel Junction Observed via Operando Magnetic Microscopy
Journal article2024, NANO LETTERS, (24) 12, p.3557-3565Publication Enabling BEOL compatibility in top-pinned STT-MRAM
Meeting abstract2019, York-Tohoku-Kaiserslautern Research Symposium on "New-Concept Spintronics Devices", 12/06/2019, p.37Publication Evidence of magnetostrictive effects on STT-MRAM performances by atomistic and spin modeling
Proceedings paper2018, IEEE Electron Devices Meeting - IEDM, 1/12/2018, p.942-945Publication Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
Journal article2023, NANO LETTERS, (23) 12, p.5482-5489Publication Field-free spin-orbit torque switching in magnetic tunnel junctions at sub-ns timescales
Meeting abstract2020, Intermag 2020, 4/05/2020, p.CB-01Publication Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales
Journal article2020, Applied Physics Letters, (116) 23, p.232406Publication High-density SOT-MRAM technology and design specifications for the embedded domain at 5nm node
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication High-Performance Radiation-Hardened Spintronic Retention Latch and Flip-Flop for Highly Reliable Processors
Journal article2021, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (21) 2, p.258-266Publication Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions
Journal article2018-10, Applied Physics Letters, (113) 14, p.142405Publication Impact of temperature on the switching behavior of scaled perpendicular magnetic tunnel junctions
Meeting abstract2017, 62nd Annual Conference on Magnetism and Magnetic Materials - MMM, 6/11/2017, p.BE-11Publication Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions
Journal article2021, PHYSICAL REVIEW APPLIED, (15) 5Publication Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
Proceedings paper2019, 2019 Symposia on VLSI Technology and Circuits, 9/06/2019, p.T194-T195
- «
- 1 (current)
- 2
- 3
- »