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Browsing by Author "Gravesteijn, Dirk"

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    A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell

    Goux, Ludovic  
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    Hurkx, Fred
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    Wang, Xin Peng
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    Delhougne, Romain  
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    Attenborough, Karen
    Journal article
    2011, Solid-State Electronics, (58) 1, p.17-22
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    A novel method for extracting the temperature-dependent crystal-growth parameters in fast-growth phase-change memories

    Goux, Ludovic  
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    Hurkx, Fred
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    Wang, Xin Peng
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    Delhougne, Romain  
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    Attenborough, Karen
    Journal article
    2010, IEEE Electron Device Letters, (31) 11, p.1287-1289
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    Atomic layer deposition of barriers for interconnect

    Besling, Wim
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    Satta, Alessandra
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    Schuhmacher, Jörg
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    Abell, Thomas
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    Sutcliffe, Victor
    Proceedings paper
    2002, Proceedings of the IEEE International Interconnect Technology Conference, 3/06/2002, p.288-291
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    Degradation of the reset switching during endurance testing of a phase-change line cell

    Goux, Ludovic  
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    Tio Castro, David
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    Hurkx, Fred
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    Lisoni, Judit
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    Delhougne, Romain  
    Journal article
    2009, IEEE Transactions on Electron Devices, (56) 2, p.354-358
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    Dual damascene patterning for full spin-on stack of porous low-K material

    Furukawa, Yukiko
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    Kokubo, Terukazu
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    Struyf, Herbert  
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    Maenhoudt, Mireille
    Proceedings paper
    2002, Proceedings of the IEEE International Interconnect Technology Conference, 3/06/2002, p.45-47
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    Evidence of the prominent role of the time-under-melt parameter in the reset switching of phase-change line cells

    Goux, Ludovic  
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    Gille, Thomas
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    Tio Castro, David
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    Hurkx, Fred
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    Lisoni, Judit
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    Delhougne, Romain  
    Proceedings paper
    2008, Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design - NVSMW/ICMTD, 18/05/2008, p.37-38
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    Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

    Tio Castro, David
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    Goux, Ludovic  
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    Hurkx, G.A.M.
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    Attenborough, Karen
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    Delhougne, Romain  
    Proceedings paper
    2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.315-318
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    Extraction of the retention properties of a phase-change cell from temperature-ramp tests using a novel method

    Goux, Ludovic  
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    Hurkx, Fred
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    Wang, Xin Peng
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    Delhougne, Romain  
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    Attenborough, Karen
    Proceedings paper
    2010, IEEE International Memory Workshop - IMW, 16/05/2010, p.33-36
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    Influence of grown-in defects on the optical and electrical properties of Si/Si 1-xGex/Si heterostructures

    Loo, Roger  
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    Caymax, Matty  
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    Simoen, Eddy  
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    Howard, Dave
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    Goryll, M.
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    Klaes, D.
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    Vescan, L.
    Journal article
    1998, Thin Solid Films, 336, p.227-231

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