Browsing by Author "Gravesteijn, Dirk"
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Publication A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell
Journal article2011, Solid-State Electronics, (58) 1, p.17-22Publication A novel method for extracting the temperature-dependent crystal-growth parameters in fast-growth phase-change memories
Journal article2010, IEEE Electron Device Letters, (31) 11, p.1287-1289Publication Atomic layer deposition of barriers for interconnect
;Besling, Wim ;Satta, Alessandra ;Schuhmacher, Jörg ;Abell, ThomasSutcliffe, VictorProceedings paper2002, Proceedings of the IEEE International Interconnect Technology Conference, 3/06/2002, p.288-291Publication Degradation of the reset switching during endurance testing of a phase-change line cell
Journal article2009, IEEE Transactions on Electron Devices, (56) 2, p.354-358Publication Dual damascene patterning for full spin-on stack of porous low-K material
Proceedings paper2002, Proceedings of the IEEE International Interconnect Technology Conference, 3/06/2002, p.45-47Publication Evidence of the prominent role of the time-under-melt parameter in the reset switching of phase-change line cells
Proceedings paper2008, Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design - NVSMW/ICMTD, 18/05/2008, p.37-38Publication Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.315-318Publication Extraction of the retention properties of a phase-change cell from temperature-ramp tests using a novel method
Proceedings paper2010, IEEE International Memory Workshop - IMW, 16/05/2010, p.33-36Publication Influence of grown-in defects on the optical and electrical properties of Si/Si 1-xGex/Si heterostructures
Journal article1998, Thin Solid Films, 336, p.227-231