imec Institutional Repository Browsing {{ collection }} by Author "Harris, J. J."

Publication

Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy

Hamilton, B.

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Ferhah, K.

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Davidson, J.

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Dawson, P.

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Whittaker, E.

;

Cheng, T. S.

;

Foxon, C. T.

Meeting abstract

1999, 3rd International Conference on Nitride Semiconductors - ICS3, 04/07/1999, p.131

Publication

High Field Magnetotransport in a Ga0.8In0.2As Quantum Well with a Parallel Si d-Layer

van der Burgt, M.

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Karavolas, V. C.

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Peeters, F. M.

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Singleton, J.

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Nicholas, R. J.

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Herlach, F.

Oral presentation

1994, High Magnetic Fields in Semiconductor Physics; August 8-12, 1994; Boston, USA.

Publication

High field magnetotransport in a Ga0.8In0.2As quantum well with a parallel Si-delta-layer

van der Burgt, M.

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Karavolas, V. C.

;

Peeters, F. M.

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Singleton, J.

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Nicholas, R. J.

;

Herlach, F.

Proceedings paper

1995, 11th International Conference , High Magnetic Fields in the Physics of Semiconductors; 8-12 August 1994; Cambridge, MA, USA., p.588-91

Publication

Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD

Harris, J. J.

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Lee, K. J.

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Harrison, I.

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Flannery, L. B.

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Korakakis, D.

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Cheng, T.

;

Foxon, C. T.

Meeting abstract

1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.126

Publication

Interpretation of the temperature-dependent transport properties of GaN/Sapphire films grown by MBE and MOCVD

Harris, J. J.

;

Lee, K. J.

;

Harrison, I.

;

Flannery, L. B.

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Korakakis, D.

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Cheng, T. S.

;

Foxon, C. T.

Journal article

1999, Physica Status Solidi A, (176) 1, p.363-367

Publication

Investigation into the transport properties of MBE grown GaN

Ansell, B. J.

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Harrison, I.

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Foxon, C. T.

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Cheng, T. S.

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Harris, J. J.

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Mavroidis, C.

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Bougrioua, Zahia

Oral presentation

2000, 4th European GaN Workshop - EGW-4

Publication

Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si d-doping layer

van der Burgt, M.

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Karavolas, V. C.

;

Peeters, F. M.

;

Singleton, J.

;

Nicholas, R. J.

;

Herlach, F.

Journal article

1995, Phys. Rev. B, 52, p.12218-12231

Publication

Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE

Bougrioua, Zahia

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Farvacque, J. L.

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Moerman, Ingrid

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Demeester, Piet

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Harris, J. J.

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Lee, K.

Journal article

1999, Physica Status Solidi B, (216) 1, p.571-576

Publication

Multiple parallel conduction paths observed in depth-profiled N-GaN epilayers

Mavroidis, C.

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Harris, J. J.

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Jackman, R. B.

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Harrison, I.

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Ansell, B. J.

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Bougrioua, Zahia

Journal article

2002, Journal of Applied Physics, (91) 12, p.9835-9840

Publication

Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

Harris, J. J.

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Lee, K. J.

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Wang, T.

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Sakai, S.

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Bougrioua, Zahia

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Moerman, Ingrid

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Thrush, E. J.

Journal article

2001, Semiconductor Science and Technology, (16) 5, p.402-405

Publication

Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers

Mavroidis, C.

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Harris, J. J.

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Lee, K.

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Harrison, I.

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Ansell, B. J.

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Bougrioua, Zahia

;

Moerman, Ingrid

Journal article

2001, Physica Status Solidi B, (228) 2, p.579-583

Publication

Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE

Bougrioua, Zahia

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Farvacque, J. L.

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Moerman, Ingrid

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Demeester, Piet

;

Harris, J. J.

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Lee, K.

Meeting abstract

1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.124

Browsing by Author "Harris, J. J."