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Browsing by Author "Hehenberger, Philipp"

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    A rigorous study of measurement techniques for negative bias temperature instability

    Grasser, Tibor
    ;
    Wagner, Paul-Jurgen
    ;
    Hehenberger, Philipp
    ;
    Gos, Wolfgang
    ;
    Kaczer, Ben  
    Proceedings paper
    2007-10, IEEE International Integrated Reliability Workshop Final Report - IIRW, 15/10/2007, p.6-11
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    A two-stage model for negative bias temperature instability

    Grasser, Tibor
    ;
    Kaczer, Ben  
    ;
    Goes, Wolfgang
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    Aichinger, Thomas
    ;
    Hehenberger, Philipp
    Proceedings paper
    2009-04, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.33-44
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    Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique

    Hehenberger, Philipp
    ;
    Aichinger, Thomas
    ;
    Grasser, Tibor
    ;
    Goes, Wolfgang
    ;
    Triebl, O.
    ;
    Kaczer, Ben  
    Proceedings paper
    2009-04, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.1033-1038
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    Quantum-mechanical modeling of NBTI in High-k SiGe MOSFETs

    Hehenberger, Philipp
    ;
    Goes, Wolfgang
    ;
    Baumgartner, O.
    ;
    Franco, Jacopo  
    ;
    Kaczer, Ben  
    Proceedings paper
    2011, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 8/09/2011

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