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Browsing by Author "Hogg, S."

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    Backscattering/channeling study of high-dose rare-earth implants into Si

    Vantomme, Andre  
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    Wahl, U.
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    Wu, Ming Fang
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    Hogg, S.
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    Pattyn, Hugo  
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    Langouche, G.
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    Bender, Hugo  
    Journal article
    1998, Nuclear Instruments and Methods. B, 138, p.471-477
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    Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

    Vantomme, Andre  
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    Wu, Ming Fang
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    Hogg, S.
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    Langouche, G.
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    Jacobs, Koen
    ;
    Moerman, Ingrid  
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    White, M. E.
    Journal article
    2000, MRS Internet Journal of Nitride Semiconductor Research, 5, Suppl. 1, p.W11.38
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    Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

    Vantomme, Andre  
    ;
    Wu, Ming Fang
    ;
    Hogg, S.
    ;
    Langouche, G.
    ;
    Jacobs, Koen
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    Moerman, Ingrid  
    ;
    White, M. E.
    Proceedings paper
    2000, GaN and Related Alloys - 1999, 29/11/1999, p.W11.38.1
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    Direct determination of the composition and elastic strain in InGaN and AlGaN layers

    Vantomme, Andre  
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    Wu, Ming Fang
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    Hogg, S.
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    Langouche, G.
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    Yao, S.
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    Jacobs, Koen
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    Moerman, Ingrid  
    ;
    Li, J.
    Meeting abstract
    1999, MRS Fall Meeting Symposium W: GaN and Related Alloys, 29/11/1999, p.W3.53
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    Elastic strain in InGaN and AlGaN layers

    Wu, Ming Fang
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    Yao, S.
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    Vantomme, Andre  
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    Hogg, S.
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    Langouche, G.
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    Van der Stricht, Wim
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    Jacobs, Koen
    Oral presentation
    1999, Fifth IUMRS International Conference on Advanced Materials; 13-18 June 1999; Beijing, China.
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    Elastic strain in InGaN and AlGaN layers

    Wu, Ming Fang
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    Vantomme, Andre  
    ;
    Hogg, S.
    ;
    Langouche, G.
    ;
    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Journal article
    2000, Materials Science and Engineering B, (75) 2_3, p.232-235
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    Formation and thermal stability of Nd0.32Y0.68Si1.7 layers formed by channeled ion beam synthesis

    Wu, Ming Fang
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    Vantomme, Andre  
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    Hogg, S.
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    Pattyn, H.
    ;
    Langouche, G.
    ;
    Jin, S.
    ;
    Bender, Hugo  
    Proceedings paper
    1998, Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits, 13/04/1998, p.191-196
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    Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation

    Jin, S.
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    Bender, Hugo  
    ;
    Wu, Ming Fang
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    Vantomme, Andre  
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    Hogg, S.
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    Pattyn, H.
    ;
    Langouche, G.
    Journal article
    1998, Journal of Crystal Growth, (194) 2, p.189-194
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    Rutherford backscattering/channeling study of a thin AlGaN layer on Al2O03(0001)

    Wu, Ming Fang
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    Vantomme, Andre  
    ;
    Hogg, S.
    ;
    Langouche, G.
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    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Journal article
    2001, Nuclear Instruments & Methods in Physics Research B, (174) 1_2, p.181-186
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    Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111)

    Vantomme, Andre  
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    Wu, Ming Fang
    ;
    Hogg, S.
    ;
    Wahl, U.
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    Deweerd, Wim
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    Pattyn, Hugo  
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    Langouche, G.
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    Jin, S.
    Oral presentation
    1998, E-MRS Symposium; 16-19 June 1998; Strassbourg, France.
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    Two-dimensional carrier profiling in advanced devices with pico-meter resolution

    Vandervorst, Wilfried  
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    Alvarez, David
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    Eyben, Pierre  
    ;
    Fouchier, Marc
    ;
    Hartwich, J.
    Proceedings paper
    2004, Proceedings Ultimate Integration of Silicon (ULIS) Workshop, 11/03/2004, p.63-67

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