Browsing by Author "Hogg, S."
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Publication Backscattering/channeling study of high-dose rare-earth implants into Si
Journal article1998, Nuclear Instruments and Methods. B, 138, p.471-477Publication Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
; ;Wu, Ming Fang ;Hogg, S. ;Langouche, G. ;Jacobs, Koen; White, M. E.Journal article2000, MRS Internet Journal of Nitride Semiconductor Research, 5, Suppl. 1, p.W11.38Publication Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
; ;Wu, Ming Fang ;Hogg, S. ;Langouche, G. ;Jacobs, Koen; White, M. E.Proceedings paper2000, GaN and Related Alloys - 1999, 29/11/1999, p.W11.38.1Publication Direct determination of the composition and elastic strain in InGaN and AlGaN layers
; ;Wu, Ming Fang ;Hogg, S. ;Langouche, G. ;Yao, S. ;Jacobs, Koen; Li, J.Meeting abstract1999, MRS Fall Meeting Symposium W: GaN and Related Alloys, 29/11/1999, p.W3.53Publication Elastic strain in InGaN and AlGaN layers
;Wu, Ming Fang ;Yao, S.; ;Hogg, S. ;Langouche, G. ;Van der Stricht, WimJacobs, KoenOral presentation1999, Fifth IUMRS International Conference on Advanced Materials; 13-18 June 1999; Beijing, China.Publication Elastic strain in InGaN and AlGaN layers
Journal article2000, Materials Science and Engineering B, (75) 2_3, p.232-235Publication Formation and thermal stability of Nd0.32Y0.68Si1.7 layers formed by channeled ion beam synthesis
Proceedings paper1998, Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits, 13/04/1998, p.191-196Publication Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation
Journal article1998, Journal of Crystal Growth, (194) 2, p.189-194Publication Rutherford backscattering/channeling study of a thin AlGaN layer on Al2O03(0001)
Journal article2001, Nuclear Instruments & Methods in Physics Research B, (174) 1_2, p.181-186Publication Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111)
; ;Wu, Ming Fang ;Hogg, S. ;Wahl, U. ;Deweerd, Wim; ;Langouche, G.Jin, S.Oral presentation1998, E-MRS Symposium; 16-19 June 1998; Strassbourg, France.Publication Two-dimensional carrier profiling in advanced devices with pico-meter resolution
Proceedings paper2004, Proceedings Ultimate Integration of Silicon (ULIS) Workshop, 11/03/2004, p.63-67