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Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation
Publication:
Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation
Date
1998
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Jin, S.
;
Bender, Hugo
;
Wu, Ming Fang
;
Vantomme, Andre
;
Hogg, S.
;
Pattyn, H.
;
Langouche, G.
Journal
Journal of Crystal Growth
Abstract
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1951
since deposited on 2021-09-30
Acq. date: 2025-10-23
Citations
Metrics
Views
1951
since deposited on 2021-09-30
Acq. date: 2025-10-23
Citations