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Browsing by Author "Hollenberg, L.C.L."

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    Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

    Rahman, R.
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    Lansbergen, G.
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    Verduijn, J.
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    Tettamanzi, G.C.
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    Park, S.H.
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    Collaert, Nadine  
    Journal article
    2011, Physical Review B, (84) 11, p.115428
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    From single-atom spectroscopy to lifetime enhanced triplet transport in MOSFETs

    Verduijn, J.
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    Lansbergen, G.P.
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    Tettamanzi, G.C.
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    Rahman, R.
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    Biesemans, Serge  
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    Collaert, Nadine  
    Proceedings paper
    2009, International Conference on Solid-State Devices and Materials - SSDM, 7/10/2009, p.258-259
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    Gate-induced quantum- confinement transition of a single dopant atom in a silicon FinFET

    Lansbergen, G.P.
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    Rahman, R.
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    Wellard, C.J.
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    Woo, I.
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    Caro, J.
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    Collaert, Nadine  
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    Biesemans, Serge  
    Journal article
    2008, Nature Physics, (4) 8, p.656-661
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    Lifetime-enhanced transport in silicon due to spin and valley blockade

    Lansbergen, G.P.
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    Rahman, R.
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    Verduijn, J.
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    Tettamanzi, G.C.
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    Collaert, Nadine  
    ;
    Biesemans, Serge  
    Journal article
    2011, Physical Review Letters, (107) 13, p.136602
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    Transport-based dopant metrology in advanced FinFETs

    Lansbergen, G.P.
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    Rahman, R.
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    Wellard, C.J.
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    Caro, J.
    ;
    Collaert, Nadine  
    ;
    Biesemans, Serge  
    Proceedings paper
    2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.713-716

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