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Browsing by Author "Houssa, M."

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    Computing elastic tensors of amorphous materials from first-principles

    Pashartis, Christopher  
    ;
    van Setten, Michiel  
    ;
    Houssa, M.
    ;
    Pourtois, Geoffrey  
    Journal article
    2024, COMPUTATIONAL MATERIALS SCIENCE, (242) June, p.Art. 113042
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    Defect generation in ultrathin SiON/ZrO2 gate dielectric stacks

    Houssa, M.
    ;
    Autran, J.L.
    ;
    Afanasiev, Valeri  
    ;
    Stesmans, Andre  
    ;
    Heyns, Marc  
    Journal article
    2002, Journal of the Electrochemical Society, (149) 12, p.F181-F185
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    Electronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition

    Chou, H. Y.
    ;
    Badylevich, M.
    ;
    Afanas'ev, V. V.
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    Houssa, M.
    ;
    Stesmans, A.
    ;
    Meersschaut, Johan  
    Journal article
    2011-12, Journal of Applied Physics, (110) 11, p.113724
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    High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-k insulators (k=2.0-2.5)

    Afanasiev, Valeri  
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    Nguyen, A.
    ;
    Houssa, M.
    ;
    Stesmans, Andre  
    ;
    Tokei, Zsolt  
    ;
    Baklanov, Mikhaïl
    Journal article
    2013, Applied Physics Letters, (102) 17, p.172908
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    Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks

    Houssa, M.
    ;
    Autran, J.L.
    ;
    Stesmans, Andre  
    ;
    Heyns, Marc  
    Journal article
    2002, Applied Physics Letters, (81) 4, p.709-711
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    Transitivity of band offsets between semiconductor heterojunctions and oxide insulators

    Afanas'ev, V. V.
    ;
    Chou, H.-Y.
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    Houssa, M.
    ;
    Lamagna, L.
    ;
    Lamperti, A.
    ;
    Molle, A.
    ;
    Vincent, Benjamin  
    Journal article
    2011, Applied Physics Letters, (99) 17, p.172101

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