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Browsing by Author "Huang, Y.L."

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    Combined electrical and spectroscopic investigation of thermal donor formation in plasma-hydrigenated n-type czochralski silicon

    Rafi, Joan Marc
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    Simoen, Eddy  
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    Claeys, Cor
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    Ulyashin, Aliaksandr
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    Huang, Y.L.
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    Job, R.
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    Lauwaert, J.
    Meeting abstract
    2004, International Scientific Meeting Belgian Physical Society. Abstracts Book, 25/06/2004, p.74
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    DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon

    Huang, Y.L.
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    Simoen, Eddy  
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    Claeys, Cor
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    Job, R.
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    Ma, Y.
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    Düngen, W.
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    Fahrner, W.R.
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    Versluys, J.
    Proceedings paper
    2005, Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting, 25/09/2005, p.547-552
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    Doping of oxidized float zone silicon by thermal donors- a low thermal budget doping method for device applications?

    Job, R.
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    Ulyashin, A.G.
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    Huang, Y.L.
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    Fahrner, W.R.
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    Simoen, Eddy  
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    Claeys, Cor
    Proceedings paper
    2002, Defect- and Impurity-Engineered Semiconductors and Devices III, 1/04/2002, p.F9.5
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    Hydrogen-plasma-enhanced thermal donor formation in n-type high-ressitivity MCZ silicon

    Simoen, Eddy  
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    Huang, Y.L.
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    Claeys, Cor
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    Rafi, J.M.
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    Job, R.
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    Fahrner, W.R.
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    Versluijs, Janko  
    Proceedings paper
    2005, Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing IV, 16/09/2005, p.165-175
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    Impact of direct plasma hydrogenation on thermal donor formation in N-type CZ silicon

    Rafi, Joan Marc
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    Simoen, Eddy  
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    Claeys, Cor
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    Huang, Y.L.
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    Ulyashin, A.G.
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    Job, R.
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    Versluys, J.
    Journal article
    2005, Journal of the Electrochemical Society, (152) 1, p.G16-G24
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    P-N junction diode fabricated based on donor formation in plasma hydrogenated P-type czochralski silicon

    Huang, Y.L.
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    Job, R.
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    Simoen, Eddy  
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    Claeys, Cor
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    Ma, Y.
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    Dungen, W.
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    Fahrner, W.R.
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    Versluijs, Janko  
    Proceedings paper
    2005, Semiconductor Defect Engineering - Materials, Synthetic Structures, and Devices, 28/03/2005, p.E9.26
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    The lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon

    Huang, Y.L.
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    Ma, Y.
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    Job, R.
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    Fahrner, W.R.
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    2005, Journal of Applied Physics, (98) 3, p.033511-1-033511-4
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    What do we know about hydrogen-iInduced thermal donors in silicon?

    Simoen, Eddy  
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    Huang, Y.L.
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    Ma, Yue
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    Lauwaert, J.
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    Clauws, P.
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    Rafi, J.M.
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    Ulyashin, A.
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    Claeys, Cor
    Journal article
    2009, Journal of the Electrochemical Society, (156) 6, p.H434-H442
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    What do we know about hydrogen-induced thermal donors?

    Simoen, Eddy  
    ;
    Huang, Y.L.
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    Ma, Y.
    ;
    Lauwaert, J.
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    Clauws, P.
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    Rafi, J.M.
    ;
    Ulyashin, A.
    ;
    Claeys, Cor
    Meeting abstract
    2008, 214th ECS Meeting, 12/10/2008, p.1991

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