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Browsing by Author "Hurkx, Fred"

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    A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell

    Goux, Ludovic  
    ;
    Hurkx, Fred
    ;
    Wang, Xin Peng
    ;
    Delhougne, Romain  
    ;
    Attenborough, Karen
    Journal article
    2011, Solid-State Electronics, (58) 1, p.17-22
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    A novel method for extracting the temperature-dependent crystal-growth parameters in fast-growth phase-change memories

    Goux, Ludovic  
    ;
    Hurkx, Fred
    ;
    Wang, Xin Peng
    ;
    Delhougne, Romain  
    ;
    Attenborough, Karen
    Journal article
    2010, IEEE Electron Device Letters, (31) 11, p.1287-1289
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    Degradation of the reset switching during endurance testing of a phase-change line cell

    Goux, Ludovic  
    ;
    Tio Castro, David
    ;
    Hurkx, Fred
    ;
    Lisoni, Judit
    ;
    Delhougne, Romain  
    Journal article
    2009, IEEE Transactions on Electron Devices, (56) 2, p.354-358
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    Evidence of the prominent role of the time-under-melt parameter in the reset switching of phase-change line cells

    Goux, Ludovic  
    ;
    Gille, Thomas
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    Tio Castro, David
    ;
    Hurkx, Fred
    ;
    Lisoni, Judit
    ;
    Delhougne, Romain  
    Proceedings paper
    2008, Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design - NVSMW/ICMTD, 18/05/2008, p.37-38
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    Extraction of the retention properties of a phase-change cell from temperature-ramp tests using a novel method

    Goux, Ludovic  
    ;
    Hurkx, Fred
    ;
    Wang, Xin Peng
    ;
    Delhougne, Romain  
    ;
    Attenborough, Karen
    Proceedings paper
    2010, IEEE International Memory Workshop - IMW, 16/05/2010, p.33-36
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    Transient characteristics of the reset programming of a phase-change line cell and the effect of the reset parameters on the obtained state

    Goux, Ludovic  
    ;
    Gille, Thomas
    ;
    Tio Castro, David
    ;
    Hurkx, Fred
    ;
    Lisoni, Judit
    ;
    Delhougne, Romain  
    Journal article
    2009, IEEE Transactions on Electron Devices, (56) 7, p.1499-1506

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