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Browsing by Author "Hyun, Sangjin"

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    Electrical characterization of capacitors with AVD- deposited hafnium silicates as high-k gate dielectric

    Van Elshocht, Sven  
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    Weber, U.
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    Conard, Thierry  
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    Kaushik, Vidya
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    Houssa, Michel  
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    Hyun, Sangjin
    Journal article
    2005, Journal of the Electrochemical Society, (152) 11, p.F185-F189
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    High-k dielectrics integration prospects

    Kubicek, Stefan  
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    Van Elshocht, Sven  
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    Delabie, Annelies  
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    Yamamoto, Kazuhiko
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    Beckx, Stephan  
    Proceedings paper
    2005, ULSI Process Integration IV, 15/05/2005, p.169-192
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    High-k gate stack engineering – towards meeting low standby power and high performance targets

    De Gendt, Stefan  
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    Brunco, David
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    Caymax, Matty  
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    Conard, Thierry  
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    Date, Lucien  
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    Delabie, Annelies  
    Proceedings paper
    2005, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 15/05/2005, p.109-117
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    Selective epitaxial Si/SiGe growth for VT shift adjustment in high k pMOS devices

    Loo, Roger  
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    Sorada, Haruyuki
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    Inoue, Akira
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    Lee, B.C
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    Hyun, Sangjin
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    Jakschik, Stefan
    Journal article
    2007, Semiconductor Science and Technology, (22) 1, p.S110-S113
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    Threshold voltage control in polysilicon or fully-silicided-Hf-based gate dielectric pMOSFETs using controlled lateral oxidation

    Kaushik, Vidya
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    Rohr, Erika
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    Hyun, Sangjin
    ;
    De Gendt, Stefan  
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    Van Elshocht, Sven  
    Meeting abstract
    2005, Meeting Abstracts 208th Meeting of the Electrochemical Society, 16/10/2005, p.159

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