Browsing by Author "Kelly, John"
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Publication Nanoscale etching of GaAs and InP in acidic H2O2 solution: a striking contrast in kinetics and surface chemistry
Proceedings paper2018, Ultra Clean Processing of Semiconductor Surfaces XIV - UCPSS, 2/09/2018, p.48-51Publication Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast
Journal article2019, Applied Surface Science, 465, p.596-606Publication Nanoscale etching of In0.53Ga0.47As for advanced CMOS processing
; ; ;Cuypers, Daniel; ; Journal article2014, ECS Journal of Solid State Science and Technology, (3) 6, p.P179-P184Publication Wet-chemical etching of III-V semiconductors: towards atomic-layer-scale processing
Meeting abstract2019, 235th ECS Meeting, 17/04/2017, p.1227