Browsing by Author "Kraitchinskii, A."
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Publication A deep level study of high-temperature electron-irradiated n-type Cz silicon
; ;Claeys, Cor ;Neimash, V. ;Kraitchinskii, A. ;Kras'ko, M. ;Tischenko, V.Voitovych, V.Proceedings paper2004, Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003, 21/09/2003, p.367-372Publication A deep level study of high-temperature electron-irradiated n-type Cz silicon
; ;Claeys, Cor ;Neimash, V. ;Kraitchinskii, A. ;Kras'ko, M. ;Tishenko, V.Voitovich, V.Oral presentation2003, Gettering and Defect Engineering in Semiconductor Technology - GADESTPublication Behavior of n-Si electrical parameters after a high-temperature 1 MeV electron irradiation
Oral presentation2002, 2nd International Conference on Materials and Coatings for Extreme PerformancesPublication Deep levels in high-energy proton-irradiated tin-doped n-type Czochralskii silicon
; ;Claeys, Cor ;Neimash, V. B. ;Kraitchinskii, A. ;Kras'ko, N. ;Puzenko, O.Blondeel, A.Journal article2000, Applied Physics Letters, (76) 20, p.2838-2840Publication DLTS studies of high-temperature electron irradiated Cz n-Si
Journal article2004, Physica Status Solidi A, (201) 3, p.509-516Publication Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
Journal article2005, Journal of Physics: Condensed Matter, (17) 22, p.S2255-S2266Publication High-temperature electron irradiation effects on the electrical parameters of n-type Cz silicon
;Neimash, V. ;Kraitchinskii, A. ;Kras'ko, N. ;Tischenko, V. ;Voitovych, V.; Claeys, CorMeeting abstract2002, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 5/06/2002, p.CM1-6Publication High-temperature electron-irradiation induced deep levels in n-type Cz silicon
; ;Claeys, Cor ;Neimash, V. ;Kraitchinskii, A. ;Kras'ko, M. ;Tischenko, V.Voitovych, V.Meeting abstract2003, International Scientific Meeting Belgian Physical Society, 27/05/2003, p.CM1-17Publication Identification of Sn-V related acceptor levels in irradiated tin-doped n-type silicon
; ;Claeys, Cor ;Neimash, V. B. ;Kraitchinskii, A. ;Kras'ko, M. ;Puzenko, O.Blondeel, A.Proceedings paper2000, General Scientific Meeting Belgische Natuurkundige Vereniging / Société Belge de Physique, 25/05/2000, p.CM41Publication Influence of tin impurities on the generation and annealing of thermal oxygen donors in Czochralski silicon at 450 degrees C
;Neimash, V. B. ;Kraitchinskii, A. ;Kras'ko, M. ;Puzenko, O. ;Claeys, Cor; Svensson, B.Journal article2000, Journal of the Electrochemical Society, (147) 7, p.2727-2733Publication On the effect of lead on irradiation induced defects in silicon
Proceedings paper2005, Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting, 25/09/2005, p.373-378Publication Oxygen precipitation and thermal donor formation in Pb and C-doped n-type Czochralski silicon
;Neimash, M.V. ;Kras'ko, M. ;Kraitchinskii, A. ;Voytovych, V. ;Kabaldin, O. ;Tsmots, V.Proceedings paper2004-10, High Purity Silicon VIII, 3/10/2004, p.286-293Publication Radiation-induced deep levels in lead and tin doped n-type czochralski silicon
Proceedings paper2004, High Purity Silicon VIII, 3/10/2004, p.395-406Publication Tin doping effects in silicon
; ;Claeys, Cor ;Neimash, V. B. ;Kraitchinskii, A. ;Kras'ko, M. ;Puzenko, O.Blondeel, A.Proceedings paper2000, High Purity Silicon VI, 22/10/2000, p.223-235Publication Tin doping of silicon for controlling oxygen precipitation and radiation hardness
;Claeys, Cor; ;Neimash, V. B. ;Kraitchinskii, A. ;Krask'o, M. ;Puzenko, O.Blondeel, A.Journal article2001, Journal of the Electrochemical Society, (148) 12, p.G738-G745Publication Tin-related deep levels in proton-irradiated n-type silicon
; ;Claeys, Cor ;Neimash, V. B. ;Kraitchinskii, A. ;Kras'ko, M. ;Puzenko, O.Blondeel, A.Proceedings paper2000, Proceedings 2nd ENDEASD Workshop, 27/06/2000, p.147-156