Browsing by Author "Langouche, G."
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Publication Backscattering/channeling study of high dose rare-earth implants in Si
Oral presentation1997, International Conference on Ion Beam Analysis - IBA; July 1997; Lisboa, Portugal.Publication Backscattering/channeling study of high-dose rare-earth implants into Si
Journal article1998, Nuclear Instruments and Methods. B, 138, p.471-477Publication Co silicide formation on SiGeC/Si and SiGe/Si layers
; ; Publication Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
; ; White, M. E.Proceedings paper2000, GaN and Related Alloys - 1999, 29/11/1999, p.W11.38.1Publication Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
; ; White, M. E.Journal article2000, MRS Internet Journal of Nitride Semiconductor Research, 5, Suppl. 1, p.W11.38Publication Comprehensive Rutherford backscattering and channeling study of ion-beam-synthesized ErSi1.7 layers
Journal article1996, Journal of Applied Physics, (79) 9, p.6920-6925Publication Crystalline quality and phase stability of hexagonal GdSi1.7 layers formed by ion beam synthesis
Journal article1996, Applied Physics Letters, (68) 23, p.3260-3262Publication Determination of the decay rate of photoionized Te atoms implanted in GaAs and Al0.3Ga0.7As
Journal article1994, Materials Science Forum, 143-147, p.1105-9Publication Direct determination of the composition and elastic strain in InGaN and AlGaN layers
; ; Li, J.Meeting abstract1999, MRS Fall Meeting Symposium W: GaN and Related Alloys, 29/11/1999, p.W3.53Publication Effects of growth parameters on the epitaxy of CoSi2//Si(100) formed by reactive deposition epitaxy
Proceedings paper1996, Silicide Thin Films - Fabrication, Properties, and Applications, 27/11/1995, p.505-510Publication Elastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study
Journal article1999, Appl. Phys. Lett., (74) 3, p.365-367Publication Elastic strain in InGaN and AlGaN layers
; Publication Elastic strain in InGaN and AlGaN layers
Journal article2000, Materials Science and Engineering B, (75) 2_3, p.232-235Publication Epitaxial growth of Gd silicides prepared by channeled ion implantation
Journal article1997, Journal of Applied Physics, (81) 7, p.3103-3107Publication Formation and microstructure of cubic metastable iron silicides synthesized during pulsed laser annealing
Journal article2003, Hyperfine Interactions, (151) 1, p.131-144Publication Formation and thermal stability of Nd0.32Y0.68Si1.7 layers formed by channeled ion beam synthesis
Proceedings paper1998, Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits, 13/04/1998, p.191-196Publication Formation of (Nd,Y)-silicides by sequential channeled implantation of Y and Nd ions
Journal article2000, Nuclear Instruments and Methods B, (B160) 3, p.349-354Publication Formation of continuous and ultra-thin PtSi layers for infrared detector applications
Oral presentation1998, Workshop on Nanoscale Characterization of Silicide/Semiconductor Contacts by Scanning Probe Microscopy; 24 Sept. 1998; Gent, BelPublication Formation of ultra-thin PtSi layers with a 2-step silicidation process
; ; Journal article1997, Microelectronic Engineering, 37/38, p.507-514Publication Growth and Properties of Ion Beam Synthesized Si/CoxN1-xSi2/Si (111) Structures
Journal article1994, J. Appl. Phys., 75, p.1201-1203
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