Browsing by Author "Leadley, D.R"
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Publication Channel backscattering characteristics of high performance germanium pMOSFETs
Proceedings paper2008, 9th International Conference on ULtimate Integration on Silicon - ULIS, 12/03/2008, p.7-10Publication High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
; ; ; ;Dobbie, Andrew ;Myronov, M.Kobayashi, MasaharuJournal article2011, Japanese Journal of Applied Physics, (50) 4, p.04DC17