Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Articles
High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
Publication:
High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
Date
2011
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
21390.pdf
964 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mitard, Jerome
;
De Jaeger, Brice
;
Eneman, Geert
;
Dobbie, Andrew
;
Myronov, M.
;
Kobayashi, Masaharu
;
Geypen, Jef
;
Bender, Hugo
;
Vincent, Benjamin
;
Krom, Raymond
;
Franco, Jacopo
;
Winderickx, Gillis
;
Vrancken, Evi
;
Vanherle, Wendy
;
Wang, Wei-E
;
Tseng, Joshua
;
Loo, Roger
;
De Meyer, Kristin
;
Caymax, Matty
;
Pantisano, Luigi
;
Leadley, D.R
;
Meuris, Marc
;
Absil, Philippe
;
Biesemans, Serge
;
Hoffmann, Thomas Y.
Journal
Japanese Journal of Applied Physics
Abstract
Description
Metrics
Views
1965
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations
Metrics
Views
1965
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations