Publication:
High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
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1972 since deposited on 2021-10-19
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Acq. date: 2026-10-07
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1972 since deposited on 2021-10-19
2last month
2last week
Acq. date: 2026-10-07
Citations