Publication:

High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric

Date

2011
Journal article
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dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorEneman, Geert
dc.contributor.authorDobbie, Andrew
dc.contributor.authorMyronov, M.
dc.contributor.authorKobayashi, Masaharu
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorVincent, Benjamin
dc.contributor.authorKrom, Raymond
dc.contributor.authorFranco, Jacopo
dc.contributor.authorWinderickx, Gillis
dc.contributor.authorVrancken, Evi
dc.contributor.authorVanherle, Wendy
dc.contributor.authorWang, Wei-E
dc.contributor.authorTseng, Joshua
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorCaymax, Matty
dc.contributor.authorPantisano, Luigi
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorWinderickx, Gillis
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-19T16:24:26Z
dc.date.available2021-10-19T16:24:26Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19438
dc.source.beginpage04DC17
dc.source.issue4
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume50
dc.title

High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric

dc.typeJournal article
dspace.entity.typePublication
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