Browsing by Author "Leadley, David"
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Publication An Origin behind Rashba spin splitting within inverted doped sGe heterostructures
Journal article2017, Applied Physics Letters, (110) 4, p.42405Publication High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization
; ; ; ;Dobbie, Andrew ;Myronov, M.Kobayashi, MasaharuProceedings paper2010, International Conference on Solid-State Devices and Materials - SSDM, 22/09/2010, p.1038-1039Publication Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors
Journal article2007, Applied Physics Letters, (91) 26, p.263512