Browsing by Author "Lorenz, Anne"
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Publication AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range
Proceedings paper2008, Optical Sensors 2008, 7/04/2008, p.70030NPublication AlGaN Schottky diodes for detector applications in the UV wavelength range
Proceedings paper2008, 14th Mediterrean Electrotechnical Conference - MELECON, 5/05/2008, p.916-922Publication AlGaN Schottky diodes for detector applications in the UV wavelength range
Journal article2009, IEEE Transactions on Electron Devices, (56) 11, p.2833-2839Publication AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
;Cheng, Kai ;Leys, Maarten ;Derluyn, Joff ;Degroote, Stefan ;Xiao, DongpingLorenz, AnneJournal article2007-01, Journal of Crystal Growth, 298, p.822-825Publication AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range
Proceedings paper2007, Optical Sensing Technology and Applications, 16/05/2007, p.658505Publication Approach for Al2O3 rear surface passivation of industrial p-type Si PERC above 19%
Journal article2012, Progress in Photovoltaics Research and Applications, (2012) 20, p.269-273Publication Backside-illuminated GaN-on-Si Schottky photodiodes for UV radiation detection
Journal article2009-12, IEEE Electron Device Letters, (30) 12, p.1308-1310Publication Blistering in ALD Al2O3 passivation layers as rear contacting for local Al BSF Si solar cells
Journal article2012, Solar Energy Materials and Solar Cells, 101, p.204-209Publication Breakdown voltage mechanisms in AlGaN switching diodes
Proceedings paper2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 20/05/2007, p.53-55Publication Comparison of illumination level dependency and rear internal reflectance of PERC type cells with different dielectric passivation stacks
Proceedings paper2011, 26th European Photovoltaic Solar Energy Conference and Exhibition - EUPVSEC, 5/09/2011, p.1486-1488Publication Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
;Kudrawiec, Robert ;Paszkiewicz, B. ;Motyka, M. ;Misciewic, Jan ;Derluyn, JoffLorenz, AnneJournal article2008-11, Journal of Applied Physics, (104) 9, p.96108Publication Development and optimization of scanning spreading resistance microscopy for measuring the two-dimensional carrier profile in solar cell structures
Meeting abstract2010, E-MRS Spring Meeting Symposium I: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications, 6/06/2010Publication Development and optimization of scanning spreading resistance microscopy for measuring the two-dimensional carrier profile in solar cell structures
Journal article2011, Physica Status Solidi A, (208) 3, p.596-599Publication Development of rear side polishing adapted to advanced solar cell concepts
Proceedings paper2011, 26th European Photovoltaic Solar Energy Conference and Exhibition - EU PVSEC, 5/09/2011, p.2210-2216Publication Dispersion effects in power switching devices basd on the III-N material system
Lorenz, AnnePHD thesis2009-09Publication Evolutionary process development towards next generation crystalline silicon solar cells: A semiconductor process toolbox application
Journal article2012, EPJ Photovoltaics, 3, p.35005Publication Experimental investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology
;Avolio, G. ;Raffo, A.; ;Vadala, V. ;Di Falco, S. ;Lorenz, AnneProceedings paper2010, Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits - INMMiC, 26/04/2010Publication Extreme ultraviolet Al(1-x)Ga(x)N photodetectors for future solar missions
Meeting abstract2008, 32nd Workshop on Compound Semiconductor Devices - WOCSDICE, 18/05/2008Publication GaN technology on high-resistivity Si-substrates for high-power-amplifiers
;Das, Jo ;Derluyn, Joff ;Lorenz, Anne; ;Xiao, Dongping; Cheng, KaiProceedings paper2008, ESA Microwave Technology and Techniques Workshop, 6/05/2008Publication GaN-on-Si HEMT stress under high electric field condition
Journal article2009, Physica Status Solidi C, (6) S2, p.S1024-S1028