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Browsing by Author "Lorenz, Anne"

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    AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range

    Malinowski, Pawel  
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    John, Joachim  
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    Lorenz, Anne
    ;
    Aparicio Alonso, Patricia
    ;
    Germain, Marianne
    Proceedings paper
    2008, Optical Sensors 2008, 7/04/2008, p.70030N
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    AlGaN Schottky diodes for detector applications in the UV wavelength range

    Hellings, Geert  
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    John, Joachim  
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    Lorenz, Anne
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    Mertens, Robert  
    Proceedings paper
    2008, 14th Mediterrean Electrotechnical Conference - MELECON, 5/05/2008, p.916-922
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    AlGaN Schottky diodes for detector applications in the UV wavelength range

    Hellings, Geert  
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    John, Joachim  
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    Lorenz, Anne
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    Malinowski, Pawel  
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    Mertens, Robert  
    Journal article
    2009, IEEE Transactions on Electron Devices, (56) 11, p.2833-2839
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    AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

    Cheng, Kai
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    Leys, Maarten
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    Derluyn, Joff
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    Degroote, Stefan
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    Xiao, Dongping
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    Lorenz, Anne
    Journal article
    2007-01, Journal of Crystal Growth, 298, p.822-825
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    AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range

    John, Joachim  
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    Malinowski, Pawel  
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    Aparicio, Patricia
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    Hellings, Geert  
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    Lorenz, Anne
    Proceedings paper
    2007, Optical Sensing Technology and Applications, 16/05/2007, p.658505
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    Approach for Al2O3 rear surface passivation of industrial p-type Si PERC above 19%

    Vermang, Bart  
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    Goverde, Hans
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    Tous, Loic  
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    Lorenz, Anne
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    Choulat, Patrick  
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    Horzel, Jörg
    Journal article
    2012, Progress in Photovoltaics Research and Applications, (2012) 20, p.269-273
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    Backside-illuminated GaN-on-Si Schottky photodiodes for UV radiation detection

    Malinowski, Pawel  
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    John, Joachim  
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    Duboz, Jean-Yves
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    Hellings, Geert  
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    Lorenz, Anne
    Journal article
    2009-12, IEEE Electron Device Letters, (30) 12, p.1308-1310
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    Blistering in ALD Al2O3 passivation layers as rear contacting for local Al BSF Si solar cells

    Vermang, Bart  
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    Goverde, Hans
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    Uruena De Castro, Angel
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    Lorenz, Anne
    ;
    Cornagliotti, Emanuele  
    Journal article
    2012, Solar Energy Materials and Solar Cells, 101, p.204-209
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    Breakdown voltage mechanisms in AlGaN switching diodes

    Lorenz, Anne
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    John, Joachim  
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    Derluyn, Joff
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    Cheng, Kai
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    Germain, Marianne
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    Borghs, Gustaaf  
    Proceedings paper
    2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 20/05/2007, p.53-55
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    Comparison of illumination level dependency and rear internal reflectance of PERC type cells with different dielectric passivation stacks

    Lorenz, Anne
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    John, Joachim  
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    Vermang, Bart  
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    Cornagliotti, Emanuele  
    ;
    Poortmans, Jef  
    Proceedings paper
    2011, 26th European Photovoltaic Solar Energy Conference and Exhibition - EUPVSEC, 5/09/2011, p.1486-1488
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    Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer

    Kudrawiec, Robert
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    Paszkiewicz, B.
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    Motyka, M.
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    Misciewic, Jan
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    Derluyn, Joff
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    Lorenz, Anne
    Journal article
    2008-11, Journal of Applied Physics, (104) 9, p.96108
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    Development and optimization of scanning spreading resistance microscopy for measuring the two-dimensional carrier profile in solar cell structures

    Eyben, Pierre  
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    Seidel, Felix  
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    Hantschel, Thomas  
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    Schulze, Andreas
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    Lorenz, Anne
    Meeting abstract
    2010, E-MRS Spring Meeting Symposium I: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications, 6/06/2010
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    Development and optimization of scanning spreading resistance microscopy for measuring the two-dimensional carrier profile in solar cell structures

    Eyben, Pierre  
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    Seidel, Felix  
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    Hantschel, Thomas  
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    Schulze, Andreas
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    Lorenz, Anne
    Journal article
    2011, Physica Status Solidi A, (208) 3, p.596-599
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    Development of rear side polishing adapted to advanced solar cell concepts

    Horzel, Jörg
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    Lorenz, Anne
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    Cornagliotti, Emanuele  
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    Uruena De Castro, Angel
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    John, Joachim  
    Proceedings paper
    2011, 26th European Photovoltaic Solar Energy Conference and Exhibition - EU PVSEC, 5/09/2011, p.2210-2216
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    Dispersion effects in power switching devices basd on the III-N material system

    Lorenz, Anne
    PHD thesis
    2009-09
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    Evolutionary process development towards next generation crystalline silicon solar cells: A semiconductor process toolbox application

    John, Joachim  
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    Prajapati, Victor
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    Vermang, Bart  
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    Lorenz, Anne
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    Allebe, Christophe
    Journal article
    2012, EPJ Photovoltaics, 3, p.35005
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    Experimental investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology

    Avolio, G.
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    Raffo, A.
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    Schreurs, Dominique  
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    Vadala, V.
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    Di Falco, S.
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    Lorenz, Anne
    ;
    De Raedt, Walter  
    Proceedings paper
    2010, Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits - INMMiC, 26/04/2010
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    Extreme ultraviolet Al(1-x)Ga(x)N photodetectors for future solar missions

    Malinowski, Pawel  
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    John, Joachim  
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    Aparicio Alonso, Patricia
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    Lorenz, Anne
    ;
    Cheng, Kai
    Meeting abstract
    2008, 32nd Workshop on Compound Semiconductor Devices - WOCSDICE, 18/05/2008
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    GaN technology on high-resistivity Si-substrates for high-power-amplifiers

    Das, Jo
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    Derluyn, Joff
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    Lorenz, Anne
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    Oprins, Herman  
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    Xiao, Dongping
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    De Raedt, Walter  
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    Cheng, Kai
    Proceedings paper
    2008, ESA Microwave Technology and Techniques Workshop, 6/05/2008
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    GaN-on-Si HEMT stress under high electric field condition

    Marcon, Denis  
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    Lorenz, Anne
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    Derluyn, Joff
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    Das, Jo
    ;
    Medjdoub, Farid
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    Cheng, Kai
    ;
    Degroote, Stefan
    Journal article
    2009, Physica Status Solidi C, (6) S2, p.S1024-S1028
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