Browsing by Author "Lozano, M."
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Publication Analysis of oxygen thermal donor formation in n-type CZ silicon
Proceedings paper2003, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, 28/04/2003, p.96-105Publication Degradation of high resistivity silicon float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation
;Rafi, J.M. ;Boulord, C. ;Hayama, K. ;Ohyama, H. ;Campabadal, F. ;Pellegrini, G.Lozano, M.Oral presentation2008, 8th International Conference on Position Sensitive DetectorsPublication Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation
;Rafi, J.M. ;Boulord, C. ;Hayama, K. ;Ohyama, H. ;Campabadal, F. ;Pellegrini, G.Lozano, M.Journal article2009, Nuclear Instruments and Methods in Physics Research A, 604, p.258-261Publication Evaluation of surface passivation layers for bulk lifetime estimation of high resistivity silicon for radiation detectors
;Rafi, J.M. ;Cardona-Safont, L. ;Zabala, M. ;Boulord, C. ;Campabadal, F. ;Pellegrini, G.Lozano, M.Proceedings paper2008, Gettering and Defect Engineering in Semiconductor Technology XII, 14/10/2007, p.431-436Publication High-energy proton irradiation effects on tunnelling MOS capacitors
;Fleta, C. ;Campabadal, F. ;Rafi, Joan Marc ;Lozano, M.Ulan, M.Journal article2004, Microelectronic Engineering, (72) 1_4, p.85-89Publication Hydrogen-induced thermal donor formation in n-type oxygenated high-resistivity FZ silicon
Proceedings paper2002, Proceedings of the 5th Annual Workshop on Semiconductor Advances for Future Electronics - SAFE, 26/11/2002, p.91-98Publication Impact of direct plasma hydrogenation on thermal donor formation in N-type CZ silicon
Journal article2005, Journal of the Electrochemical Society, (152) 1, p.G16-G24Publication Test structures for MCM-D technology characterization
;Lozano, M. ;Santander, J. ;Cabruja, E. ;Perello, Carles ;Ullan, M. ;Lora-Tamayo, E.Doyle, R.Journal article1999, IEEE Trans. Semiconductor Manufacturing, (12) 2, p.184-192