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Browsing by Author "Mahatme, N."

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    Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs

    Mahatme, N.
    ;
    Zhang, E.
    ;
    Reed, R.A.
    ;
    Bhuva, B.L.
    ;
    Schrimpf, R.D.
    ;
    Fleetwood, D.M.
    ;
    Linten, Dimitri  
    Journal article
    2012, IEEE Transactions on Nuclear Science, (59) 6, p.2966-2973

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