Publication:

Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs

Date

2012
Journal article
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Author(s)

Mahatme, N.
;
Zhang, E.
;
Reed, R.A.
;
Bhuva, B.L.
;
Schrimpf, R.D.
;
Fleetwood, D.M.
;
Linten, Dimitri  
;
Simoen, Eddy  
;
Griffoni, Alessio
;
Aoulaiche, Marc
;
Jurczak, Gosia  
;
Groeseneken, Guido  

Journal

IEEE Transactions on Nuclear Science

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1969 since deposited on 2021-10-20
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Acq. date: 2026-03-16

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