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Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs
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Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs
Date
2012
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mahatme, N.
;
Zhang, E.
;
Reed, R.A.
;
Bhuva, B.L.
;
Schrimpf, R.D.
;
Fleetwood, D.M.
;
Linten, Dimitri
;
Simoen, Eddy
;
Griffoni, Alessio
;
Aoulaiche, Marc
;
Jurczak, Gosia
;
Groeseneken, Guido
Journal
IEEE Transactions on Nuclear Science
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1965
since deposited on 2021-10-20
Acq. date: 2025-10-24
Citations
Metrics
Views
1965
since deposited on 2021-10-20
Acq. date: 2025-10-24
Citations