Publication:

Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs

Date

2012
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorMahatme, N.
dc.contributor.authorZhang, E.
dc.contributor.authorReed, R.A.
dc.contributor.authorBhuva, B.L.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorFleetwood, D.M.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-20T13:03:53Z
dc.date.available2021-10-20T13:03:53Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21074
dc.source.beginpage2966
dc.source.endpage2973
dc.source.issue6
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.volume59
dc.title

Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
25158.pdf
Size:
1.05 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles