Browsing by Author "Marsland, John"
Now showing 1 - 5 of 5
- Results per page
- Sort Options
Publication Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector
Journal article2021, IEEE ELECTRON DEVICE LETTERS, (42) 10, p.1448-1451Publication Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing scheme
Proceedings paper2019, IEEE International Electron Devices Meeting - IEDM 2019, 7/12/2019, p.827-830Publication Stochastic computing based on volatile GeSe ovonic threshold switching selectors
Journal article2020, IEEE Electron Device Letters, (41) 10, p.1496-1499Publication TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device
Journal article2019, IEEE Transactions on Electron Devices, (66) 1, p.777-784Publication The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique
Journal article2018, IEEE Electron Device Letters, (39) 7, p.955-958