Browsing by Author "Monfray, S."

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An extended "Y function" method for saturation regime characterization: application to bulk Si and Ge technologies

Diouf, C.
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Cros, A.
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Monfray, S.
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Mitard, Jerome
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Rosa, J.
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Gloria, D.
;
Ghibaudo, G.
Proceedings paper
2012, International Conference on Solid State Devices and Materials - SSDM, 25/09/2012
Dielectric pockets - a new concept of the junctions for deca- nanometric CMOS devices

Jurczak, Gosia
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Skotnicki, T.
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Gwoziecki, R.
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Paoli, M.
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Tormen, B.
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Ribot, P.
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Dutartre, D.
Journal article
2001, IEEE Trans. Electron Devices, (48) 8, p.1770-1775
Electrical transport characterization of nano CMOS devices with ultra-thin silicon film

Ghibaudo, G.
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Mouis, M.
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Pham-Nguyen, L.
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Bennamane, K.
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Pappas, I.
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Cros, A.
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Bidal, G.
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Fleury, D.
Proceedings paper
2009, 9th International Workshop on Junction Technology - IWJT, 11/06/2009, p.58-63
Y function method applied to saturation regime: apaprent saturation mobility and saturation velocity extraction

Diouf, C.
;
Cros, A.
;
Monfray, S.
;
Mitard, Jerome
;
Rosa, S.
;
Gloria, D.
;
Ghibaudo, G.
Journal article
2013, Solid-State Electronics, 85, p.12-14