Browsing by Author "Nakashima, T."

Now showing 1 - 4 of 4

Carrier lifetime evaluation of electron irradiated SiGe/Si diode

Idemoto, T.
;
Ohyama, H.
;
Takakura, K.
;
Tsunoda, I.
;
Yoneoka, M.
;
Nakashima, T.
Proceedings paper
2010, 2nd Semiconductor Materials and Devices Forum - SMDF-2, 11/12/2010, p.154-155
Investigation of the Si doping effect in b-Ga2O3 films by co-sputtering of gallium oxide and Si

Takakura, K.
;
Funasaki, S.
;
Tsunoda, I.
;
Ohyama, H.
;
Takeuchi, D.
;
Nakashima, T.
;
Shibuya, M.
Journal article
2012, Physica B: Condensed Matter, (407) 15, p.2900-2902
Radiation damage of Si1-xGex S/D p-MOSFETs with different Ge concentrations

Nakashima, T.
;
Idemoto, T.
;
Tsunoda, I.
;
Takakura, K.
;
Yoneoka, M.
;
Ohyama, H.
;
Yoshino, K.
Journal article
2012, Thin Solid Films, 520, p.3337-3340
Radiation damages of SiGe devices by electron irradiation and their thermally recovery bahavior

Nakashima, T.
;
Idemoto, T.
;
Takakura, K.
;
Tsunoda, I.
;
Yoneoka, M.
;
Ohyama, H.
;
Yoshino, K.
Proceedings paper
2010, 2nd Semiconductor Materials and Devices Forum - SMDF-2, 11/12/2010, p.56-59